Birnbaum Importance Patterns and Their Applications in the Component Assignment Problem

The Birnbaum importance (BI) is a well-known measure that evaluates the relative contribution of components to system reliability. It has been successfully applied to tackling some reliability problems. This dissertation investigates two topics related to the BI in the reliability field: the patterns of component BIs and the BI-based heuristics and meta-heuristics for solving the component assignment problem (CAP).There exist certain patterns of component BIs (i.e., the relative order of the BI values to the individual components) for linear consecutive-k-out-of-n (Lin/Con/k/n) systems when all components have the same reliability p. This study summarizes and annotates the existing BI patterns for Lin/Con/k/n systems, proves new BI patterns conditioned on the value of p, disproves some patterns that were conjectured or claimed in the literature, and makes new conjectures based on comprehensive computational tests and analysis. More importantly, this study defines a concept of segment in Lin/Con/k/n systems for analyzing the BI patterns, and investigates the relationship between the BI and the common component reliability p and the relationship between the BI and the system size n. One can then use these relationships to further understand the proved, disproved, and conjectured BI patterns.The CAP is to find the optimal assignment of n available components to n positions in a system such that the system reliability is maximized. The ordering of component BIs has been successfully used to design heuristics for the CAP. This study proposes five new BI-based heuristics and discusses their corresponding properties. Based on comprehensive numerical experiments, a BI-based two-stage approach (BITA) is proposed for solving the CAP with each stage using different BI-based heuristics. The two-stage approach is much more efficient and capable to generate solutions of higher quality than the GAMS/CoinBonmin solver and a randomization method.This dissertation then presents a meta-heuristic, i.e., a BI-based genetic local search (BIGLS) algorithm, for the CAP in which a BI-based local search is embedded into the genetic algorithm. Comprehensive numerical experiments show the robustness and effectiveness of the BIGLS algorithm and especially its advantages over the BITA in terms of solution quality

Mechanical Ventilation Induces an Inflammatory Response in Preinjured Lungs in Late Phase of Sepsis

Mechanical ventilation (MV) may amplify the lung-specific inflammatory response in preinjured lungs by elevating cytokine release and augmenting damage to the alveolar integrity. In this study, we test the hypothesis that MV exerts different negative impacts on inflammatory response at different time points of postlung injury. Basic lung injury was induced by cecal ligation and puncture (CLP) surgery in rats. Physiological indexes including blood gases were monitored during MV and samples were assessed following each experiment. Low VT (tidal volume) MV caused a slight increase in cytokine release and tissue damage at day 1 and day 4 after sepsis induced lung injury, while cytokine release from the lungs in the two moderately ventilated VT groups was amplified. Interestingly, in the two groups where rats received low VT MV, we found that infiltration of inflammatory cells was only profound at day 4 after CLP. Marked elevation of protein leakage indicated a compromise in alveolar integrity in rats that received moderate VT MV at day 4 following CLP, correlating with architectural damage to the alveoli. Our study indicates that preinjured lungs are more sensitive to mechanical MV at later phases of sepsis, and this situation may be a result of differing immune status

Application of Silicon Oxide on High Efficiency Monocrystalline Silicon PERC Solar Cells

In the photovoltaic industry, an antireflection coating consisting of three SiNx layers with different refractive indexes is generally adopted to reduce the reflectance and raise the efficiency of monocrystalline silicon PERC (passivated emitter and rear cell) solar cells. However, for SiNx, a refractive index as low as about 1.40 cannot be achieved, which is the optimal value for the third layer of a triple-layer antireflection coating. Therefore, in this report the third layer is replaced by SiOx, which possesses a more appropriate refractive index of 1.46, it and can be easily integrated into the SiNx deposition process with the plasma-enhanced chemical vapor deposition (PECVD) method. Through simulation and analysis with SunSolve, three different thicknesses were selected to construct the SiOx third layer. The replacement of 15 nm SiNx with 30 nm SiOx as the third layer of antireflection coating can bring about an efficiency gain of 0.15%, which originates from the reflectance reduction and spectral response enhancement below about 550 nm wavelength. However, because the EVA encapsulation material of the solar module absorbs light in short wavelengths, the spectral response advantage of solar cells with 30 nm SiOx is partially covered up, resulting in a slightly lower cell-to-module (CTM) ratio and an output power gain of only 0.9 W for solar module

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias

Severe haze episodes and seriously polluted fog water in Ji'nan, China

International audienceHaze episodes often hit urban cities in China recently. Here, we present several continuous haze episodes with extremely high PM2.5 levels that occurred over several weeks in early 2013 and extended across most parts of the northern and eastern China—far exceeding the Beijing–Tianjin–Hebei region. Particularly, the haze episode covered ~ 1 million km2 on January 14, 2013 and the daily averaged PM2.5 concentration exceeded 360 μg m− 3 in Ji'nan. The observed maximum hourly PM2.5 concentration in urban Ji'nan reached 701 μg m− 3 at 7:00 am (local time) in January 30. During these haze episodes, several fog events happened and the concurrent fog water was found to be seriously polluted. For the fog water collected in Ji'nan from 10:00 pm in January 14 to 11:00 am in January 15, sulfate, nitrate, and ammonium were the major ions with concentrations of 1.54 × 106, 8.98 × 105, and 1.75 × 106 μeq L− 1, respectively, leading to a low in-situ pH of 3.30. The sulfate content in the fog sample was more than 544 times as high as those observed in other areas. With examination of the simultaneously observed data on PM2.5 and its chemical composition, the fog played a role in scavenging and removing fine particles from the atmosphere during haze episodes and thus was seriously contaminated. However, the effect was not sufficient to obviously cleanse air pollution and block haze episodes

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release process of NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio of GeSi to Si layer was achieved for GeSi/Si stacks samples with different GeSi thickness (5 nm, 10 nm, and 20 nm) or annealing temperatures (≤900 °C). Furthermore, the influence of ground-plane (GP) doping in Si sub-fin region to improve electrical characteristics of devices was carefully investigated by experiment and simulations. The subthreshold characteristics of n-type devices were greatly improved with the increase of GP doping doses. However, the p-type devices initially were improved and then deteriorated with the increase of GP doping doses, and they demonstrated the best electrical characteristics with the GP doping concentrations of about 1 × 1018 cm−3, which was also confirmed by technical computer aided design (TCAD) simulation results. Finally, 4 stacked GAA Si NS channels with 6 nm in thickness and 30 nm in width were firstly fabricated on bulk substrate, and the performance of the stacked GAA Si NS devices achieved a larger ION/IOFF ratio (3.15 × 105) and smaller values of Subthreshold swings (SSs) (71.2 (N)/78.7 (P) mV/dec) and drain-induced barrier lowering (DIBLs) (9 (N)/22 (P) mV/V) by the optimization of suppression of parasitic channels and device’s structure